bc817, bc818 vishay semiconductors formerly general semiconductor document number 88163 www.vishay.com 09-may-02 1 small signal transistors (npn) 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit collector-emitter voltage (base shorted) bc817 v ces 50 v bc818 30 collector-emitter voltage (base open) bc817 v ceo 45 v bc818 25 emitter-base voltage v ebo 5v collector current i c 800 ma peak collector current i cm 1000 ma peak base current i bm 200 ma peak emitter current i em 1000 ma power dissipation at t sb = 50 ? cp tot 310 (1) mw thermal resistance junction to ambiant air r ja 450 (1) c/w thermal resistance junction to substrate backside r sb 320 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) device on fiberglass substrate, see layout on third page. .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features npn silicon epitaxial planar transistors for switching, af driver and amplifier applications. especially suited for automatic insertion in thick and thin-film circuits. these transistors are subdivided into three groups -16, -25, and -40 according to their current gain. as complementary types, the pnp transistors bc807 and bc808 are recommended. to-236ab (sot-23) dimensions in inches and (millimeters) mounting pad layout type marking bc817-16 6a -25 6b -40 6c bc818-16 6e -25 6f -40 6g pin configuration 1 = base 2 = emitter 3 = collector mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box
bc817, bc818 vishay semiconductors formerly general semiconductor www.vishay.com document number 88163 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit dc current gain current gain group-16 h fe v ce = 1v, i c = 100ma 100 250 -25 160 400 -40 250 600 h fe v ce = 1v, i c = 500ma 40 collector saturation voltage v cesat i c = 500ma, i b = 50ma 0.7 v base saturation voltage v besat i c = 500ma, i b = 50ma 1.3 v base-emitter voltagev beon v ce = 1v, i c = 500ma 1.2 v collector-base cutoff current i cbo v cb = 20v 100 na v cb = 20v, t j = 150 c 5 a emitter-base cutoff current i ebo v eb = 4v 100 na gain-bandwidth product f t v ce = 5v, i c = 10ma 100 mhz f = 50mhz collector-base capacitance c cbo v cb = 10v, f = 1mhz 12 pf note: (1) device on fiberglass substrate, see layout below. 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r ja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm)
bc817, bc818 vishay semiconductors formerly general semiconductor document number 88163 www.vishay.com 09-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc817, bc818 vishay semiconductors formerly general semiconductor www.vishay.com document number 88163 4 09-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc817, bc818 vishay semiconductors formerly general semiconductor document number 88163 www.vishay.com 09-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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